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Wakita, Takanori Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Terashima, Kensei Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Hamada, Takahiro Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Fujiwara, Hirokazu Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Minohara, Makoto Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Kobayashi, Masaki Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Horiba, Koji
Kumigashira, Hiroshi Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)
Kutluk, Galif Synchrotron Radiation Center, Hiroshima University
Nagao, Masanori Center for Crystal Science and Technology, University of Yamanashi
Watauchi, Satoshi Center for Crystal Science and Technology, University of Yamanashi
Tanaka, Isao Center for Crystal Science and Technology, University of Yamanashi
Demura, Satoshi National Institute for Materials Science
Okazaki, Hiroyuki National Institute for Materials Science
Takano, Yoshihiko National Institute for Materials Science
Mizuguchi, Yoshikazu Department of Electrical and Electronic Engineering, Tokyo Metropolitan University
Miura, Osuke Department of Electrical and Electronic Engineering, Tokyo Metropolitan University
Okada, Kozo Department of Physics and the Graduate school of Natural Science and Technology, Okayama University
Muraoka, Yuji Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Yokoya, Takayoshi Research Laboratory for Surface Science and the Graduate School of Natural Science and Technology, Okayama University
Abstract
We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x = 0.7 has no f(0) component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (E-F) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2.
Note
This is an article published by American Physical Society
Published Date
2017-02
Publication Title
Physical Review B
Volume
volume95
Issue
issue8
Publisher
American Physical Society
Start Page
085109
ISSN
2469-9950
NCID
AA11187113
Content Type
Journal Article
language
英語
OAI-PMH Set
岡山大学
Copyright Holders
American Physical Society
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DOI
Web of Sience KeyUT
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isVersionOf https://doi.org/10.1103/PhysRevB.95.085109