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ID 34128
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Author
Nagano, Takayuki
Kuwahara, Eiji
Kubozono, Yoshihiro Kaken ID publons
Fujiwara, Akihiko
Abstract

A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally-on type FET properties, where non-zero current was observed at gate-source voltage of 0 VGS, of 0V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current.Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap ≈0.3 eV. The field-effect mobility for this FET was 1.5 x 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.

Keywords
Field effect transistors
Note
Document Objects Identifier:10.1016/j.cplett.2005.05.019
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 30 June 2005, Volume 409, Issues 4-6, Pages 187-191.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.05.019
Copyright 2005 Elsevier B.V. All rights reserved.
Published Date
2005-06-30
Publication Title
Chemical Physics Letters
Volume
volume409
Issue
issue4-6
Publisher
Elsevier Science B.V.
Start Page
187
End Page
191
ISSN
0009-2614
NCID
AA00602122
Content Type
Journal Article
language
英語
Copyright Holders
Elsevier B.V.
File Version
author
Refereed
True
DOI
Web of Science KeyUT
Submission Path
physics_general/6