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Flexible C60 field-effect transistor (FET) device has been fabricated with polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally-off FET properties are observed in this FET device. The field-effect mobility, ?, is estimated to be ~10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with high dielectric Ba0.4Sr0.6Ti0.96O3 (BST) gate insulator, showing n-channel properties; the ? value is estimated to be ~10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
insulated gate field effect transistors
Digital Object Identifier:10.1063/1.2081134
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letter, 3 October 2005, 87, 143506, (3 Pages).
Copyright © 2005 American Institute of Physics. All rights reserved.
Applied Physics Letters