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ID 34199
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Author
Kondo, Kazuo
Yonezawa, Toshihiro
Mikami, Daisuke
Okubo, Toshikazu
Taguchi, Yuichi
Takahashi, Kenji
Barkey, Dale P
Abstract

Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced signal delay. Formation of suitable vias by electrodeposition into cavities presents a filling problem similar to that encountered in the damascene process. Because via dimensions for through-chip filling are larger and have a higher aspect ratio relative to features in damascene, process optimization requires modification of existing superconformal plating baths and plating parameters. In this study, copper filling of high-aspect-ratio through-chip vias was investigated and optimized with respect to plating bath composition and applied current wavetrain. Void-free vias 70 mu m deep and 10 mu m wide were formed in 60 min using additives in combination with pulse-reverse current and dissolved-oxygen enrichment. The effects of reverse current and dissolved oxygen on the performance of superfilling additives is discussed in terms of their effects on formation, destruction, and distribution of a Cu(I) thiolate accelerant. (c) 2005 The Electrochemical Society. All rights reserved.

Keywords
plating baths
additives
Note
Digital Object Identifer:10.1149/1.2041047
Published with permission from the copyright holder. This is the institute's copy, as published in Journal of the Electrochemical Society, 8 September 2005, Volume 152, Issue 11, Pages 173-177.
Publisher URL:http://dx.doi.org/10.1149/1.2041047
Direct access to Thomson Web of Science record
© 2005 The Electrochemical Society, Inc. All rights reserved.
Published Date
2005-09
Publication Title
Journal of the Electrochemical Society
Volume
volume152
Issue
issue11
Start Page
173
End Page
177
Content Type
Journal Article
language
英語
Refereed
True
DOI
Web of Sience KeyUT
Submission Path
physical_and_theoretical_chemistry/19