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ID 11614
JaLCDOI
Sort Key
12
Title Alternative
Preparation and Properties of ZnO Transparent Conductive Thin Films by Activated Reactive Evaporation Method
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Author
Fujiwara, Takashi
Miura, Yoshinari
Abstract
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). The electrical conductivity of the films and the doping effect of Al ions were also investigated. XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and Al doping amount affect the c-axis orientation, the growth rate, the microstructure of the films and electrical conductivity. Optimum conditions with a fine texture of the surface and having good ctystallinity as well as good conductivity (≒10(-4)Ω・cm) were as follows : the substrate temperature; 200℃, the total evaporation rate; 1.0Å/s, the oxygen pressure; 2.0×10(-4) Torr, the r.f. power; 250W and the Al evaporation rare ratio; 2~6%. The films with 1.0×10(-3)Ω・cm were prepared at 50℃ for the substrate temperature.
Keywords
ZnO film
Al doped ZnO
transparent conductive film
r.f. activated reactive evaporation method
Publication Title
岡山大学環境理工学部研究報告
Published Date
1997-01-10
Volume
volume2
Issue
issue1
Publisher
岡山大学環境理工学部
Publisher Alternative
Faculty of Environmental Science and Technology, Okayama University
Start Page
121
End Page
129
ISSN
1341-9099
NCID
AN10529213
Content Type
Departmental Bulletin Paper
OAI-PMH Set
岡山大学
language
日本語
File Version
publisher
NAID
Eprints Journal Name
fest