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Author
Sakamoto, Yoshifumi
Abstract

We have studied effects of hydrogen treatment on the resistivity profile of the SiGe/Si episystem by spreading resistance (SR) method. In this paper, we present experimental findings that hydrogen treatment reduces the resistivity at a specific part in the Si substrate region. This position was confirmed to be under the interface between SiGe and Si that emerged on the bevel surface during hydrogen treatment. We investigated the depth of resistivity-reduced regions which was formed by various hydrogenating conditions and found that the region was extended to the same depth as the penetration depth of hydrogen. We concluded that the low-resistivity region was formed under the influence of hydrogen introduced from bevel surface. We attributed this resistivity reduction to formation of some defects which originally existed at the interface and diffused into Si substrate with hydrogen.

Keywords
SiGe/Si
Hydroge. Resistivity reduction
Interface
Note
Published with permission from the copyright holder.
This is a author's copy,as published in Physica B-Condensed Matter , 2007 Vol.401 pp.218-221
Publisher URL: http://dx.doi.org/10.1016/j.physb.2007.08.150
Direct access to Thomson Web of Science record
Copyright © 2007 by Elsevier B.V.
Published Date
2008-06-29
Publication Title
Physica B-Condensed Matter
Volume
volume401
Start Page
218
End Page
221
Content Type
Journal Article
language
英語
Refereed
True
DOI
Web of Sience KeyUT
Submission Path
physics_general/31