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ID 55640
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Uesugi, Eri Research Institute for Interdisciplinary Science, Okayama University
Miao, Xiao Research Institute for Interdisciplinary Science, Okayama University
Ota, Hiromi Advanced Science Research Center, Okayama University
Goto, Hidenori Research Institute for Interdisciplinary Science, Okayama University
Kubozono, Yoshihiro Research Institute for Interdisciplinary Science, Okayama University
Abstract
Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo(Se1-x Te-x)(2) with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2H - structure in all Mo(Se1-x Te-x)(2). The lattice constants of a and c increase monotonically with increasing x, indicating the substitution of Se by Te. When x < 0.4 in a FET with a thin single crystal of Mo(Se1-x Te-x)(2), n-channel FET properties were observed, changing to p-channelor ambipolar operation for x > 0.4. In contrast, the polarity of a thick single-crystal Mo(Se1-x Te-x)(2) FET did not change despite an increase in x. The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The mu value in the thin single-crystal FET showed a parabolic variation, with a minimum mu at around x = 0.4, which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.
Note
This is an article published by American Physical Society
Published Date
2017-01
Publication Title
Physical Review B
Volume
volume95
Issue
issue24
Publisher
American Physical Society
Start Page
245310
ISSN
2469-9950
NCID
AA11187113
Content Type
Journal Article
language
英語
OAI-PMH Set
岡山大学
Copyright Holders
American Physical Society
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DOI
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isVersionOf https://doi.org/10.1103/PhysRevB.95.245310