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Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C60/pentacene heterostructure. A complementary metal-oxide-semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of 4, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.
CMOS integrated circuits
Field effect transistors
Logic gate circuits
N-channel field-effective mobilities
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 26 September 2005, Volume 413, Issues 4-6, Pages 379-383.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.07.096
Copyright 2005 Elsevier B.V. All rights reserved.
Chemical Physics Letters
Elsevier Science B.V.
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