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ID 34159
FullText URL
Author
Kuwahara, Eiji
Kusai, Haruka
Nagano, Takayuki
Abstract

Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C60/pentacene heterostructure. A complementary metal-oxide-semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of 4, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.

Keywords
Band structure
Carbon
CMOS integrated circuits
Field effect transistors
Logic gates
Thin films
Threshold voltage
Band structures
Logic gate circuits
N-channel field-effective mobilities
Pentacene
Logic circuits
Note
Published with permission from the copyright holder. This is the author's copy of the work, as published in Chemical Physics Letters, 26 September 2005, Volume 413, Issues 4-6, Pages 379-383.
Publisher URL: http://dx.doi.org/10.1016/j.cplett.2005.07.096
Copyright 2005 Elsevier B.V. All rights reserved.
Published Date
2005-09-26
Publication Title
Chemical Physics Letters
Volume
volume413
Issue
issue4-6
Publisher
Elsevier Science B.V.
Start Page
379
End Page
383
ISSN
0009-2614
NCID
AA00602122
Content Type
Journal Article
language
英語
Copyright Holders
Elsevier B.V.
File Version
author
Refereed
True
DOI
Web of Sience KeyUT
Submission Path
physics_general/5