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ID 32961
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Author
Okada, Yasuyuki
Abstract
The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of alpha-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with various ratios. The resultant aluminum nitride added silicon carbide ceramics were doped with nitrogen by changing the post-HIP nitrogen gas pressure. The lattice parameter increased with the amount of adding aluminum nitride indicating that the incorporated aluminum substituted smaller silicon atoms. After post-HIP treatment, lattice parameter then decreased with nitrogen gas pressure. The piezoresistive coefficient increased with the addition of aluminum nitride, it further increased with the nitrogen doping pressure.
Keywords
HIP
co-doping
donor
acceptor
silicon carbide
strain sensor
Note
Published with permission from the copyright holder.
This is a author's copy,as published in Ceramics International , 2008 Vol.34 Issue.4 pp.845-848
Publisher URL: http://dx.doi.org/10.1016/j.ceramint.2007.09.033
Direct access to Thomson Web of Science record
Copyright © 2007 Elsevier Ltd and Techna Group S.r.l.
Published Date
2008-05
Publication Title
Ceramics International
Volume
volume34
Issue
issue4
Publisher
Elsevier Science Ltd
Start Page
845
End Page
848
ISSN
0272-8842
NCID
AA10622625
Content Type
Journal Article
language
英語
Copyright Holders
Elsevier Ltd and Techna Group S.r.l.
File Version
author
Refereed
True
DOI
Web of Sience KeyUT
Submission Path
materials_science/1