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ID 15464
JaLCDOI
Sort Key
9
フルテキストURL
著者
尾坂 明義 Department of Applied Chemsitry
Kawamura Haruyuki Department of Applied Chemsitry
三浦 嘉也 Department of Applied Chemsitry
抄録
Amorphous films of lead oxyfluorosilicate were prepared with a rf-sputtering technique, and the distribution profiles of the component elements and chemical states of the fluoride ions were analyzed with an X-ray photoelectron spectrometer. Si atoms with an expanded coordination, O(4)Si-F, were present near the surface, and O(3)Si-F units were present in the deeper part of the films. Electrical resistance indicated transition to a conduction state for the films containing fluoride ions, while the films were crystallized to precipitate low quartz by the irradiation of He-Ne laser of 3 mW up to 1 sec.
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
発行日
1994-03-15
28巻
2号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
77
終了ページ
84
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
OAI-PMH Set
岡山大学
言語
English
論文のバージョン
publisher
NAID
Eprints Journal Name
mfe