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ID 15486
Eprint ID
15486
フルテキストURL
著者
三浦 嘉也 Department of Applied Chemistry
高田 潤 Department of Applied Chemistry
尾坂 明義 Department of Applied Chemistry
河村 利夫 Department of Applied Chemistry
抄録
Zinc oxide films were prepared on silica glass substrates by the use of an r.f. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph (SEM). XRD measurements indicate that the films were c-axis oriented and that an r.f. plasma of Zn and O was necessary for the ZnO film deposition. Substrate temperature, oxygen gas pressure, evaporation rate, r.f. power and inlet position of oxygen gas effect the c-axis orientation, the growth rate and the microstructure of the films. Optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows: the substrate temperature;400℃, the evaporation rate;5.0(A)/s, the oxygen pressure;2.0x10(-4) Torr, the r.f. power;150 to 200W, and the oxygen gas inlet near the substrate. For the film prepared under the optimum conditions, the standard deviation σ of the rocking curve for the (002) diffraction was 1.9deg, smaller than that of the film prepared by using an r.f. sputtering method.
発行日
1990-12-14
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
出版物タイトル(別表記)
岡山大学工学部紀要
25巻
1号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
23
終了ページ
35
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
言語
English
論文のバージョン
publisher
査読
無し
Eprints Journal Name
mfe