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ID 34151
フルテキストURL
著者
Kubozono, Yoshihiro Okayama University Kaken ID publons
Ochi, Kenji Okayama University
Nagano, Takayuki Okayama University
Ohta, Toshio Okayama University
Nouchi, Ryo Okayama University
Matsuoka, Yukitaka Japan Institute of Science and Technology
Shikoh, Eiji Japan Institute of Science and Technology
Fujiwara, Akihiko Japan Institute of Science and Technology
抄録

Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V?1 s?1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

キーワード
device physics
C<sub>60</sub>
Eu electrodes
備考
Digital Object Identifier:10.1063/1.2337990
Published with permission from the copyright holder. This is the institute's copy, as published in Applied Physics Letters, 21 August 2006, 89, 083511, (3 Pages).
Publisher URL:http://dx.doi.org/10.1063/1.2337990
Copyright © 2006 American Institute of Physics. All rights reserved.
発行日
2006-8
出版物タイトル
Applied Physics Letters
89巻
8号
開始ページ
083511-1
終了ページ
083511-3
資料タイプ
学術雑誌論文
言語
English
査読
有り
DOI
Submission Path
physics_general/1