fulltext.pdf 397 KB
Kondo, Kazuo Osaka Prefecture University
Yonezawa, Toshihiro Okayama University
Mikami, Daisuke Okayama University
Okubo, Toshikazu Toppan Printing Company, Limited
Taguchi, Yuichi Tsukuba Center Incorporated
Takahashi, Kenji Tsukuba Center Incorporated
Barkey, Dale P University of New Hampshire
Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced signal delay. Formation of suitable vias by electrodeposition into cavities presents a filling problem similar to that encountered in the damascene process. Because via dimensions for through-chip filling are larger and have a higher aspect ratio relative to features in damascene, process optimization requires modification of existing superconformal plating baths and plating parameters. In this study, copper filling of high-aspect-ratio through-chip vias was investigated and optimized with respect to plating bath composition and applied current wavetrain. Void-free vias 70 mu m deep and 10 mu m wide were formed in 60 min using additives in combination with pulse-reverse current and dissolved-oxygen enrichment. The effects of reverse current and dissolved oxygen on the performance of superfilling additives is discussed in terms of their effects on formation, destruction, and distribution of a Cu(I) thiolate accelerant. (c) 2005 The Electrochemical Society. All rights reserved.
Digital Object Identifer:10.1149/1.2041047
Published with permission from the copyright holder. This is the institute's copy, as published in Journal of the Electrochemical Society, 8 September 2005, Volume 152, Issue 11, Pages 173-177.
Direct access to Thomson Web of Science record
© 2005 The Electrochemical Society, Inc. All rights reserved.
Journal of the Electrochemical Society
|Web of Science KeyUT|