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ID 15436
Eprint ID
15436
フルテキストURL
著者
藤井 達生 Department of Applied Chemistry
Sakata Naoki Department of Applied Chemistry
難波 徳郎 Department of Applied Chemistry
尾坂 明義 Department of Applied Chemistry
三浦 嘉也 Department of Applied Chemistry
高田 潤 Department of Applied Chemistry
抄録
(001)-oriented Ti(2)O(3) films were epitaxially grown on a(001)-face of sapphire single-crystalline substrate by an activated reactive evaporation method. The formation ranges of stoichiometric and nonstoichiometric Ti(2)O(3) films were determined as a function of the substrate temperature (Ts), the oxygen pressure (Po(2)) and the deposition rate. Stoichiometric Ti(2)O(3) films were grown at Ts≧673K under Po(2)≧1.0×10(-4)Torr, which showed the metal-insulator transition with a sharp change in electrical resistivity from 3.5×10(-2) to 2.6×10(-3)Ωcm at 361K. Nonstoichiometric films prepared under less oxidized conditions did not exhibit the transition. The nonstoichiometry of the Ti(2)O(3)films was discussed in terms of excess Ti ions.
発行日
1992-03-28
出版物タイトル
Memoirs of the Faculty of Engineering, Okayama University
出版物タイトル(別表記)
岡山大学工学部紀要
26巻
2号
出版者
Faculty of Engineering, Okayama University
出版者(別表記)
岡山大学工学部
開始ページ
69
終了ページ
75
ISSN
0475-0071
NCID
AA10699856
資料タイプ
紀要論文
言語
English
論文のバージョン
publisher
査読
無し
Eprints Journal Name
mfe