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ID 34199
フルテキストURL
著者
Kondo, Kazuo Osaka Prefecture University
Yonezawa, Toshihiro Okayama University
Mikami, Daisuke Okayama University
Okubo, Toshikazu Toppan Printing Company, Limited
Taguchi, Yuichi Tsukuba Center Incorporated
Takahashi, Kenji Tsukuba Center Incorporated
Barkey, Dale P University of New Hampshire
抄録

Through-chip electrodes for three-dimensional packaging can offer short interconnection and reduced signal delay. Formation of suitable vias by electrodeposition into cavities presents a filling problem similar to that encountered in the damascene process. Because via dimensions for through-chip filling are larger and have a higher aspect ratio relative to features in damascene, process optimization requires modification of existing superconformal plating baths and plating parameters. In this study, copper filling of high-aspect-ratio through-chip vias was investigated and optimized with respect to plating bath composition and applied current wavetrain. Void-free vias 70 mu m deep and 10 mu m wide were formed in 60 min using additives in combination with pulse-reverse current and dissolved-oxygen enrichment. The effects of reverse current and dissolved oxygen on the performance of superfilling additives is discussed in terms of their effects on formation, destruction, and distribution of a Cu(I) thiolate accelerant. (c) 2005 The Electrochemical Society. All rights reserved.

キーワード
plating baths
additives
備考
Digital Object Identifer:10.1149/1.2041047
Published with permission from the copyright holder. This is the institute's copy, as published in Journal of the Electrochemical Society, 8 September 2005, Volume 152, Issue 11, Pages 173-177.
Publisher URL:http://dx.doi.org/10.1149/1.2041047
Direct access to Thomson Web of Science record
© 2005 The Electrochemical Society, Inc. All rights reserved.
発行日
2005-09
出版物タイトル
Journal of the Electrochemical Society
152巻
11号
開始ページ
173
終了ページ
177
資料タイプ
学術雑誌論文
言語
English
査読
有り
DOI
Web of Sience KeyUT
Submission Path
physical_and_theoretical_chemistry/19